Publications

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Bandgap Tunability in Zn(Sn,Ge)N2 Semiconductor Alloys

Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin-Wang Wang, Nathan S. Lewis, and Harry A. Atwater. 2014. “Bandgap Tunability in Zn(Sn,Ge)N2 Semiconductor Alloys.” Advanced Materials, 26, 8, Pp. 1235–1241. Publisher’s Version

DOI: https://doi.org/10.1002/adma.201304473 (opens in a new tab)

Abstract

Abstract:

ZnSn1‐xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth‐abundant alternatives for efficient, high‐quality optoelectronic devices and solar‐energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

Last updated on 07/13/2018